XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP

被引：164

作者：

BERTRAND, PA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 01期

关键词：

D O I：

10.1116/1.570694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：28 / 33

页数：6

共 21 条

[1]

CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[2] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[3]

CRISTOU A, 1979, SOLID STATE ELECTRON, V22, P857

[4]

Freeouf J. L., 1975, Critical Reviews in Solid State Sciences, V5, P245, DOI 10.1080/10408437508243482

[5] SURFACE STATE BAND ON GAAS (110) FACE [J].

GREGORY, PE ;

SPICER, WE ;

CIRACI, S ;

HARRISON, WA .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[6] THEORY OF POLAR SEMICONDUCTOR SURFACES [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1492-1496

[7] EFFECTS OF WATER-VAPOR AND OXYGEN EXCITATION ON OXIDATION OF GAAS, GAP AND INSB SURFACES STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].

IWASAKI, H ;

MIZOKAWA, Y ;

NISHITANI, R ;

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) :1525-1529

[8] X-RAY PHOTOEMISSION STUDY OF OXIDATION PROCESS AT CLEAVED (110) SURFACES OF GAAS, GAP AND INSB [J].

IWASAKI, H ;

MIZOKAWA, Y ;

NISHITANI, R ;

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :1925-1933

[9] X-RAY PHOTOEMISSION STUDY OF INTERACTION OF OXYGEN AND AIR WITH CLEAVED GAAS (110) SURFACES [J].

IWASAKI, H ;

MIZOKAWA, Y ;

NISHITANI, R ;

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :315-320

[10]

KAZMERSKI LL, 1980, 7TH ANN C PHYS COMP

← 1 2 3 →