AUGER ANALYSIS OF ANODIC OXIDE INP INTERFACE

被引：59

作者：

WILMSEN, CW ^{[1
]}

KEE, RW ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：953 / 956

页数：4

共 10 条

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[2] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE
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[3] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS
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[4] PHASE SEPARATION IN SILICON OXIDES AS SEEN BY AUGER-ELECTRON SPECTROSCOPY
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STRAUSSER, YE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (08) : 452 - 454
[5] AUGER ANALYSIS OF SIO2-SI INTERFACE
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SPICER, WE
STRAUSSER, YE
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037
[6] JOSHI A, 1975, METHODS SURFACE ANAL, P164
[7] DECONVOLUTION TECHNIQUES IN AUGER ELECTRON SPECTROSCOPY
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PERIA, WT
[J]. SURFACE SCIENCE, 1971, 26 (01) : 125 - &
[8] STOICHIOMETRY OF SIO2-SI INTERFACIAL REGIONS .1. ULTRATHIN OXIDE-FILMS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 58 - 58
[9] WANG KL, 1976, J ELECTROCHEM SOC, V123, P1392, DOI 10.1149/1.2133083
[10] Wilmsen C. W., 1975, Critical Reviews in Solid State Sciences, V5, P313, DOI 10.1080/10408437508243489