ARSENIC PASSIVATION OF INP SURFACE FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES BASED ON BOTH ULTRAHIGH-VACUUM TECHNIQUE AND CHEMICAL PROCEDURE

被引:21
作者
CHAVE, J
CHOUJAA, A
SANTINELLI, C
BLANCHET, R
VIKTOROVITCH, P
机构
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D O I
10.1063/1.338867
中图分类号
O59 [应用物理学];
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页码:257 / 260
页数:4
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