REDUCTION OF FAST INTERFACE STATES AND SUPPRESSION OF DRIFT PHENOMENA IN ARSENIC-STABILIZED METAL-INSULATOR-INP STRUCTURES

被引：33

作者：

BLANCHET, R

VIKTOROVITCH, P

CHAVE, J

SANTINELLI, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 08期

关键词：

D O I：

10.1063/1.95500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：761 / 763

页数：3

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共 16 条

[1] BLANCHET R, 1983, P INT C INSULATING F, P130
[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN
CHENG, KY
CHO, AY
WAGNER, WR
BONNER, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021
[3] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
HECKINGBOTTOM, R
OHNO, H
WOOD, CEC
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
[4] DELHOMME BJ, 1979, P MEASUREMENT CONTRO, P6
[5] FURUKAWA Y, 1984, UNPUB JUN WORKSH DIE
[6] METAL-INSULATOR-SEMICONDUCTOR DIODES FABRICATED ON INP, INGAASP, AND INGAAS
KOBAYASHI, T
SHINODA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3339 - 3341
[7] PROCESSING OF INP MIS DEVICES MONITORED VIA PHOTOLUMINESCENCE MEASUREMENTS
KRAWCZYK, S
BAILLY, B
SAUTREUIL, B
BLANCHET, R
VIKTOROVITCH, P
[J]. ELECTRONICS LETTERS, 1984, 20 (06) : 255 - 256
[8] INTERFACIAL CONSTRAINTS ON DEVICE PERFORMANCE
LILE, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 496 - 503
[9] N-CHANNEL INVERSION-MODE INP MISFET
LILE, DL
COLLINS, DA
MEINERS, LG
MESSICK, L
[J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659
[10] ELECTRICAL-PROPERTIES OF AL2O3 AND A1PXOY DIELECTRIC LAYERS ON INP
MEINERS, LG
[J]. THIN SOLID FILMS, 1984, 113 (02) : 85 - 92