METAL-INSULATOR-SEMICONDUCTOR DIODES FABRICATED ON INP, INGAASP, AND INGAAS

被引：15

作者：

KOBAYASHI, T

SHINODA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.330998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3339 / 3341

页数：3

共 14 条

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[5]

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[7] ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].

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[8]

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[9] IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2151-2156

[10] SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150

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