AL-AL2O3-INP MIS STRUCTURES

被引：17

作者：

FAVENNEC, PN

LECONTELLEC, M

LHARIDON, H

PELOUS, GP

RICHARD, J

机构：

[1] CPM/PMT, Centre National d'Etudes des Télécommunications

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-insulator-semiconductor (MIS) structures were produced by electron-beam deposition of Al2O3 on InP. The electrical properties of such structures were investigated. For optimum conditions, capacitance/voltage (C/V) measurements show that the interface state density can be reduced to 1011 states cm-2 eV-1 by heat treatments. Capacitance transient measurements lead to an estimate of 2×103 cm sec-1 for the surface recombination velocity.

引用

页码：807 / 808

页数：2

共 12 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[2] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP
CASEY, HC
BUEHLER, E
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249
[3] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[4] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND
FRITZSCHE, D
[J]. ELECTRONICS LETTERS, 1978, 14 (03) : 51 - 52
[5] INVESTIGATION OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH AL2O3 INSULATING LAYERS OBTAINED BY ELECTRON-GUN EVAPORATION
LECONTELLEC, M
MORIN, F
[J]. THIN SOLID FILMS, 1978, 52 (01) : 63 - 68
[6] ELECTRICAL CHARACTERISTICS OF INP SURFACE
LILE, DL
COLLINS, DA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 868 - 868
[7] INP-SIO2 MIS STRUCTURE
MESSICK, L
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4949 - 4951
[8] INP-LANGMUIR-FILM MIS STRUCTURES
ROBERTS, GG
PANDE, KP
BARLOW, WA
[J]. ELECTRONICS LETTERS, 1977, 13 (19) : 581 - 583
[9] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR
SCHRODER, DK
GULDBERG, J
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1285 - +
[10] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 285 - 299

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