INTERFACIAL PROPERTIES OF AL2O3-INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PREPARED IN EXCESS ORGANO-PHOSPHORUS ATMOSPHERE

被引：10

作者：

KOBAYASHI, T

ICHIKAWA, T

SAKUTA, K

FUJISAWA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3876 / 3878

页数：3

共 12 条

[1]

FRITZSCHE D, 1979, C INSULATING FILMS S

[2]

Kobayashi T., UNPUB

[3] IN0.53GA0.47AS N-CHANNEL NATIVE OXIDE INVERSION MODE FIELD-EFFECT TRANSISTOR [J].

LIAO, ASH ;

TELL, B ;

LEHENY, RF ;

CHANG, TY .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :280-282

[4] N-CHANNEL INVERSION-MODE INP MISFET [J].

LILE, DL ;

COLLINS, DA ;

MEINERS, LG ;

MESSICK, L .

ELECTRONICS LETTERS, 1978, 14 (20) :657-659

[5]

OHATA K, 1981, 1981 INT S GAAS REL

[6] SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150

[7]

SAWADA T, 1981, 13TH C SOL STAT DEV

[8] INGAASP NORMAL-CHANNEL INVERSION-MODE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH LOW INTERFACE STATE DENSITY [J].

SHINODA, Y ;

KOBAYASHI, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6386-6394

[9] POLARIZATION PHENOMENA AND OTHER PROPERTIES OF PHOSPHOSILICATE GLASS FILMS ON SILICON [J].

SNOW, EH ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :263-&

[10] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

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