POLARIZATION PHENOMENA AND OTHER PROPERTIES OF PHOSPHOSILICATE GLASS FILMS ON SILICON

被引：139

作者：

SNOW, EH

DEAL, BE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 03期

关键词：

D O I：

10.1149/1.2423929

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：263 / &

共 20 条

[1] EFFECT OF OXIDE LAYERS ON THE DIFFUSION OF PHOSPHORUS INTO SILICON [J].

ALLEN, RB ;

BERNSTEIN, H ;

KURTZ, AD .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :334-337

[2] MEASUREMENT OF THICKNESS AND REFRACTIVE INDEX OF OXIDE FILMS ON SILICON [J].

BOOKER, GR ;

BENJAMIN, CE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) :1206-1212

[3] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :527-533

[4] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN AND STEAM SUPPLEMENTARY DATA [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) :1292-1293

[5]

Dekker A J, 1957, SOLID STATE PHYS

[6] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[7]

KEONJIAN E, 1963, MICROELECTRONICS, pCH5

[8] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].

KERR, DR ;

LOGAN, JS ;

BURKHARDT, PJ ;

PLISKIN, WA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&

[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J].

KOOI, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1383-1381

[10]

LANGE NA, 1961, HANDBOOK CHEMISTR ED, P286

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