KINETICS ASPECTS OF TISI2 DEPOSITION WITHOUT SILICON CONSUMPTION

被引：13

作者：

BENSAHEL, D ^{[1
]}

REGOLINI, JL ^{[1
]}

MERCIER, J ^{[1
]}

机构：

[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 15期

关键词：

D O I：

10.1063/1.102306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1549 / 1551

页数：3

共 12 条

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[7] CHEMICAL VAPOR-DEPOSITION OF REFRACTORY-METALS DISILICIDES - A REVIEW [J].

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[8]

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[10]

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