VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION PROCESS FOR SELECTIVE TITANIUM SILICIDE FILMS

被引:20
作者
ILDEREM, V
REIF, R
机构
关键词
D O I
10.1063/1.99851
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:687 / 689
页数:3
相关论文
共 8 条
[1]   LPCVD OF TITANIUM DISILICIDE - SELECTIVITY OF GROWTH [J].
BOUTEVILLE, A ;
ROYER, A ;
REMY, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :2080-2083
[2]  
ILDEREM V, IN PRESS J ELECTROCH
[3]  
ILDEREM V, 1987, 10TH INT CVD C FALL, V87, P1467
[4]  
KEMPER MJH, 1984, 1984 EL SOC M EL SOC, V84, P533
[5]  
MURARKA SP, 1983, SILICIDES VLSI APPLI
[6]  
OSBURN CM, 1982, VLSI SCI TECHNOLOGY, V82, P213
[7]   LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE [J].
TEDROW, PK ;
ILDEREM, V ;
REIF, R .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :189-191
[8]  
TING CY, 1982, VLSI SCI TECHNOLOGY, V82, P224