LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[2] KERN W, 1970, RCA REV, V31, P187

[3] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[4] MURARKA SP, 1981, SEMICONDUCTOR SILICO, P551

[5] SINHA AK, 1982, VLSI SCI TECHNOLOGY, V82, P173

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[2] KERN W, 1970, RCA REV, V31, P187

[3] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[4] MURARKA SP, 1981, SEMICONDUCTOR SILICO, P551

[5] SINHA AK, 1982, VLSI SCI TECHNOLOGY, V82, P173