LPCVD OF TITANIUM DISILICIDE - SELECTIVITY OF GROWTH

被引：35

作者：

BOUTEVILLE, A

ROYER, A

REMY, JC

机构：

来源：

关键词：

D O I：

10.1149/1.2100825

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2080 / 2083

页数：4

共 13 条

[1] A REVIEW OF LPCVD METALLIZATION FOR SEMICONDUCTOR-DEVICES [J].

COOKE, MJ .

[2]

COOKE MJ, 1982, SOLID STATE TECHNOL, V25, P62

[3]

GREEN ML, 1985, J MET, V6, P63

[4]

KEMPER MJ, 1985, ELECTROCHEMICAL SOC, P285

[5]

MURARKA SP, 1981, ELECTROCHEMICAL SOC, P551

[6]

MURARKA SP, 1983, SILICIDES VLSI APPLI

[7] KINETICS AND MECHANISM OF SELECTIVE TUNGSTEN DEPOSITION BY LPCVD [J].

PAULEAU, Y ;

LAMI, P .

[8] PLASMA-ENHANCED CVD OF TITANIUM SILICIDE [J].

ROSLER, RS ;

ENGLE, GM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :733-737

[9]

ROSSI RC, 1982, IND RES DEV, V9, P112

[10] REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS [J].

SINHA, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :778-785