PLASMA-ENHANCED CVD OF TITANIUM SILICIDE

[1] AVIGAL I, 1983, SOLID STATE TECHNOL, V26, P217

[2] AVIGAL I, 1984, SOLID STATE TECHNOL, V27, P123

[3] MICROHARDNESS AND OTHER PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1983, 107 (02) : 201 - 206

[4] BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[5] CHU JK, 1983, ECS EXT ABS, V83, P510

[6] SILICON-NITRIDE FILM DEPOSITION BY HOT-WALL PLASMA-ENHANCED CVD FOR GAAS LSI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 49 - 53

[7] PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .1. UNDOPED FILMS DEPOSITED FROM 525-DEGREES-C TO 725-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2326 - 2331

[8] MCLACHLAN DR, 1983, WORKSHOP REFRACTORY

[9] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301

[10] ROSLER RS, 1981, SOLID STATE TECHNOL, V24, P172

[1] AVIGAL I, 1983, SOLID STATE TECHNOL, V26, P217

[2] AVIGAL I, 1984, SOLID STATE TECHNOL, V27, P123

[3] MICROHARDNESS AND OTHER PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1983, 107 (02) : 201 - 206

[4] BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[5] CHU JK, 1983, ECS EXT ABS, V83, P510

[6] SILICON-NITRIDE FILM DEPOSITION BY HOT-WALL PLASMA-ENHANCED CVD FOR GAAS LSI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 49 - 53

[7] PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .1. UNDOPED FILMS DEPOSITED FROM 525-DEGREES-C TO 725-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2326 - 2331

[8] MCLACHLAN DR, 1983, WORKSHOP REFRACTORY

[9] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301

[10] ROSLER RS, 1981, SOLID STATE TECHNOL, V24, P172