RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES

[1] CHOW TP, 1979, IEDM, P458

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[3] ELLIOTT RP, 1965, CONSTITUTION BINA S1

[4] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5] HUMEROTHERY W, 1951, J I MET, V80, P609

[6] KEIFFER R, 1963, HARTSTOFFE, P455

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] MOFFAT WG, 1980, HDB BINARY PHASE DIA

[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[1] CHOW TP, 1979, IEDM, P458

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[3] ELLIOTT RP, 1965, CONSTITUTION BINA S1

[4] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5] HUMEROTHERY W, 1951, J I MET, V80, P609

[6] KEIFFER R, 1963, HARTSTOFFE, P455

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] MOFFAT WG, 1980, HDB BINARY PHASE DIA

[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417