REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS

被引：120

作者：

MURARKA, SP

FRASER, DB

SINHA, AK

LEVINSTEIN, HJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1409 / 1417

页数：9

共 15 条

[1]

CHANG CC, UNPUBLISHED

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293

[3]

FRASER D, UNPUBLISHED

[4]

MELLIARSMITH CM, UNPUBLISHED

[5] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J].

MOCHIZUKI, T ;

SHIBATA, K ;

INOUE, T ;

OHUCHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :37-42

[6] OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS [J].

MURARKA, SP ;

LEVINSTEIN, HJ ;

MARCUS, RB ;

WAGNER, RS .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :4001-4003

[7] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :342-349

[8] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :350-356

[9] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

[10]

MURARKA SP, UNPUBLISHED

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