OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS

被引：24

作者：

MURARKA, SP ^{[1
]}

LEVINSTEIN, HJ ^{[1
]}

MARCUS, RB ^{[1
]}

WAGNER, RS ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.324241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4001 / 4003

页数：3

共 10 条

[1]

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[2] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON [J].

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[3] OXIDATION INDUCED STACKING-FAULTS IN N-TYPE AND P-TYPE (100) SILICON [J].

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QUINTANA, G .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :46-51

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SHENG, TT .

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GDULA, RA ;

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[7] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J].

ROZGONYI, GA ;

PETROFF, PM ;

READ, MH .

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[8] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

SECCODARAGONA, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :948-+

[9] DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI [J].

SEIDEL, TE ;

MEEK, RL ;

CULLIS, AG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :600-609

[10] ELIMINATION OF STACKING-FAULTS IN SILICON WAFERS BY HCL ADDED DRY O2 OXIDATION [J].

SHIRAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) :747-752

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