ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS

被引：57

作者：

PETROFF, PM ^{[1
]}

ROZGONYI, GA ^{[1
]}

SHENG, TT ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 04期

关键词：

D O I：

10.1149/1.2132878

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：565 / 570

页数：6

共 24 条

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[10] EFFECTS OF GROWN-IN AND PROCESS-INDUCED DEFECTS IN SINGLE-CRYSTAL SILICON [J].

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