OXIDATION INDUCED STACKING-FAULTS IN N-TYPE AND P-TYPE (100) SILICON

被引：62

作者：

MURAKA, SP ^{[1
]}

QUINTANA, G ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：46 / 51

页数：6

共 46 条

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[4]

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[5]

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[10] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J].

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