DISLOCATION ETCH FOR (100) PLANES IN SILICON

[1] ANNEALING BEHAVIOR AND ETCHING PHENOMENA OF MICRODEFECTS IN DISLOCATION-FREE FLOAT-ZONE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 577 - &

[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[3] FAUST IW, 1960, SURFACE CHEMISTRY ME, P151

[4] MOUNDS FORMED AT DISLOCATIONS DURING PREFERENTIAL ETCHING OF (100) SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 477 - &

[5] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[6] SIRTL E, 1961, Z METALLKD, V52, P529

[1] ANNEALING BEHAVIOR AND ETCHING PHENOMENA OF MICRODEFECTS IN DISLOCATION-FREE FLOAT-ZONE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 577 - &

[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[3] FAUST IW, 1960, SURFACE CHEMISTRY ME, P151

[4] MOUNDS FORMED AT DISLOCATIONS DURING PREFERENTIAL ETCHING OF (100) SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 477 - &

[5] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[6] SIRTL E, 1961, Z METALLKD, V52, P529