ANNEALING BEHAVIOR AND ETCHING PHENOMENA OF MICRODEFECTS IN DISLOCATION-FREE FLOAT-ZONE SILICON

被引：17

作者：

DARAGONA, FS

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1971年 / 7卷 / 02期

关键词：

D O I：

10.1002/pssa.2210070232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：577 / &

共 10 条

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[3] CISZEK T, TO BE PUBLISHED
[4] INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS
FIERMANS, L
VENNIK, J
[J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 463 - &
[5] KELLER WE, PRIVATE COMMUNICATIO
[6] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON
KOCK, AJRD
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &
[7] PLASKETT TS, 1965, T METALL SOC AIME, V233, P809
[8] UNTERSUCHUNGEN ZUM AUSSCHEIDUNGSMECHANISMUS VON KUPFER IN SILIZIUM
RIEGER, H
[J]. PHYSICA STATUS SOLIDI, 1964, 7 (02): : 685 - 699
[9] SCHWUTTKE HG, 1961, J ELECTROCHEM SOC, V108, P163
[10] SIRTL E, 1961, Z METALLKD, V52, P529