PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .1. UNDOPED FILMS DEPOSITED FROM 525-DEGREES-C TO 725-DEGREES-C

被引：27

作者：

KAMINS, TI

CHIANG, KL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 10期

关键词：

D O I：

10.1149/1.2123504

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：2326 / 2331

页数：6

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[4] PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .2. FILMS DOPED DURING DEPOSITION
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