PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .2. FILMS DOPED DURING DEPOSITION

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] Campbell D. S., 1966, BASIC PROBLEMS THIN, P223

[3] OPTICAL EVALUATION OF POLYCRYSTALLINE SILICON SURFACE-ROUGHNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2267 - 2269

[4] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110

[5] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[6] PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .1. UNDOPED FILMS DEPOSITED FROM 525-DEGREES-C TO 725-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2326 - 2331

[7] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[8] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38

[9] ROSLER RS, 1981, SOLID STATE TECHNOL, V24, P172

[10] TAKAGI M, 1973, J JAPAN SOC APPL PHY, V42, P101

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] Campbell D. S., 1966, BASIC PROBLEMS THIN, P223

[3] OPTICAL EVALUATION OF POLYCRYSTALLINE SILICON SURFACE-ROUGHNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2267 - 2269

[4] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110

[5] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[6] PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .1. UNDOPED FILMS DEPOSITED FROM 525-DEGREES-C TO 725-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2326 - 2331

[7] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[8] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38

[9] ROSLER RS, 1981, SOLID STATE TECHNOL, V24, P172

[10] TAKAGI M, 1973, J JAPAN SOC APPL PHY, V42, P101