PROPERTIES OF P-TYPE INDIUM ANTIMONIDE .2. PHOTOELECTRIC PROPERTIES AND CARRIER LIFETIME

被引:18
作者
HILSUM, C
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1959年 / 74卷 / 475期
关键词
D O I
10.1088/0370-1328/74/1/312
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:81 / 86
页数:6
相关论文
共 11 条
[1]   NEW INFRA-RED DETECTORS USING INDIUM ANTIMONIDE [J].
AVERY, DG ;
GOODWIN, DW ;
RENNIE, AE .
JOURNAL OF SCIENTIFIC INSTRUMENTS, 1957, 34 (10) :394-395
[2]   INFRA-RED PHOTOCELL BASED ON THE PHOTOELECTROMAGNETIC EFFECT IN INDIUM ANTIMONIDE [J].
HILSUM, C ;
ROSS, IM .
NATURE, 1957, 179 (4551) :146-146
[3]   PROPERTIES OF P-TYPE INDIUM ANTIMONIDE .1. ELECTRICAL PROPERTIES [J].
HILSUM, C ;
BARRIE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (460) :676-685
[4]  
HILSUM C, 1955, J ELECTR 1, V1, P134
[5]  
Jenkins DP., 1955, J ELECT CONTROL, V1, P145, DOI [10.1080/00207215508961399, DOI 10.1080/00207215508961399]
[6]   PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB [J].
KURNICK, SW ;
ZITTER, RN .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) :278-285
[7]   THE LIFETIME OF ADDED CARRIERS IN INSB [J].
MACKINTOSH, IM ;
ALLEN, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12) :985-990
[8]   RECOMBINATION RADIATION FROM INSB [J].
MOSS, TS ;
HAWKINS, TH .
PHYSICAL REVIEW, 1956, 101 (05) :1609-1610
[9]   PERFORMANCE OF PHOTOCONDUCTORS [J].
ROSE, A .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12) :1850-1869
[10]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842