IN-SITU FABRICATION OF 3-DIMENSIONALLY CONFINED GAAS AND INAS VOLUMES VIA GROWTH ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES

被引：33

作者：

KONKAR, A ^{[1
]}

RAJKUMAR, KC ^{[1
]}

XIE, Q ^{[1
]}

CHEN, P ^{[1
]}

MADHUKAR, A ^{[1
]}

LIN, HT ^{[1
]}

RICH, DH ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI & ENGN,PHOTON MAT & DEVICES LAB,LOS ANGELES,CA 90089

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80226-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Three-dimensionally confined GaAs/AlGaAs and InAs/GaAs structures on [100] oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy. Two stages of mesa top pinch-off involving similar to {103} and subsequently {101} side facets are revealed. GaAs and InAs quantum boxes with lateral linear dimensions down to 40 nm and confined by AlGaAs and GaAs, respectively, are reported. For InAs, the strain relief in mesas is found to enhance the well known similar to 2 ML thickness for three-dimensional island formation on unpatterned substrates to, remarkably, > 5 ML for mesa size similar to 75 nm. Cathodoluminescence emission from the InAs on the mesa top attests to its good optical quality.

引用

页码：311 / 316

页数：6

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