INSITU APPROACH TO REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA SUBSTRATE ENCODED SIZE REDUCING EPITAXY ON NONPLANAR PATTERNED SUBSTRATES

被引：51

作者：

MADHUKAR, A ^{[1
]}

RAJKUMAR, KC ^{[1
]}

CHEN, P ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 13期

关键词：

D O I：

10.1063/1.108636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first realization of three-dimensionally confined semiconductor heterostructures via a one-step growth on nonplanar patterned substrate. Truncated pyramidal shaped mesas on GaAs (111)B patterned substrates are employed and a substrate encoded size reducing epitaxical growth process exploited to realize GaAs pinched-off pyramidal volumes of base approximately 50 nm and height 13 nm.

引用

页码：1547 / 1549

页数：3

共 20 条

[1]

BEAUMONT SP, 1989, SCI ENG ONE ZERO DIM

[2] GROWTH-CONTROL OF GAAS EPILAYERS WITH SPECULAR SURFACE FREE OF PYRAMIDS AND TWINS ON NONMISORIENTED (111)B-SUBSTRATES [J].