共 14 条
APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES
被引:116
作者:

LEBENS, JA
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

TSAI, CS
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

VAHALA, KJ
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

KUECH, TF
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
机构:
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词:
D O I:
10.1063/1.102862
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated. Spectrally resolved cathodoluminescence images as well as spectra from single dots and wires are presented. A blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases.
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页码:2642 / 2644
页数:3
相关论文
共 14 条
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