QUANTUM WIRES IN INGAAS INP FABRICATED BY HOLOGRAPHIC PHOTOLITHOGRAPHY

[1] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1275 - 1277

[2] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES [J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2774 - 2777

[3] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 607 - 609

[4] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1043 - 1045

[5] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163

[6] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (20) : 1384 - 1386

[7] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166

[8] PETROFF PM, 1982, APPL PHYS LETT, V42, P636

[9] RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 145 - 149

[10] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587

[1] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1275 - 1277

[2] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES [J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2774 - 2777

[3] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 607 - 609

[4] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1043 - 1045

[5] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163

[6] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (20) : 1384 - 1386

[7] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166

[8] PETROFF PM, 1982, APPL PHYS LETT, V42, P636

[9] RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 145 - 149

[10] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587