APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES

被引：116

作者：

LEBENS, JA ^{[1
]}

TSAI, CS ^{[1
]}

VAHALA, KJ ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 26期

关键词：

D O I：

10.1063/1.102862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated. Spectrally resolved cathodoluminescence images as well as spectra from single dots and wires are presented. A blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases.

引用

页码：2642 / 2644

页数：3

共 14 条

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APPLIED PHYSICS LETTERS, 1989, 54 (26) :2692-2694

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