GROWTH-CONTROL OF GAAS EPILAYERS WITH SPECULAR SURFACE FREE OF PYRAMIDS AND TWINS ON NONMISORIENTED (111)B-SUBSTRATES

被引：64

作者：

CHEN, P

RAJKUMAR, KC

MADHUKAR, A

机构：

[1] Devices Laboratory, Department of Materials Science and Engineering, University of Southern California, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 16期

关键词：

D O I：

10.1063/1.105086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth control of GaAs epilayers with specular surface, free of superficial pyramid-shape features and bulk twins, is achieved on a nonmisoriented GaAs(111)B substrate via in situ, real time measurement of specular beam intensity of reflection high-energy electron diffraction (RHEED). Regimes of growth conditions are identified in terms of the static surface phase diagram and the temporal RHEED intensity behavior during growth, thus affording the possibility to realize a reproducible control independent of growth systems.

引用

页码：1771 / 1773

页数：3

共 17 条

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