GROWTH OF GAAS, ALGAAS, AND INGAAS ON (111)B GAAS BY MOLECULAR-BEAM EPITAXY

被引：28

作者：

ELCESS, K

LIEVIN, JL

FONSTAD, CG

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：638 / 641

页数：4

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[9] HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10] SEGREGATED ALGAAS(110) GROWN BY MOLECULAR-BEAM EPITAXY [J].

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