OPTICAL-PROPERTIES OF STRAINED-LAYER SUPERLATTICES WITH GROWTH AXIS ALONG [111]

被引：170

作者：

SMITH, DL ^{[1
]}

MAILHIOT, C ^{[1
]}

机构：

[1] XEROX CORP, WEBSTER RES CTR, WEBSTER, NY 14580 USA

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.58.1264

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1264 / 1267

页数：4

共 14 条

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[2] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES
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[3] ELECTRON MOBILITIES IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPER-LATTICES
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[4] NONLINEAR OPTICAL SUSCEPTIBILITIES IN GROUP-4 AND 3-5 SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1968, 171 (03): : 891 - +
[5] ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES
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SMITH, DL
[J]. PHYSICAL REVIEW B, 1987, 35 (03): : 1242 - 1259
[6] EFFECTS OF STRAIN-INDUCED ELECTRIC-FIELDS ON THE ELECTRONIC-STRUCTURE OF [111] GROWTH AXIS SEMICONDUCTOR SUPERLATTICES
MAILHIOT, C
SMITH, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 996 - 999
[7] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .2. APPLICATION TO GA1-XINXAS-AL1-YINYAS(100) SUPERLATTICES
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SMITH, DL
[J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8360 - 8372
[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[9] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) : 273 - 280
[10] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273

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