MOSSBAUER STUDY OF THE MICROSCOPIC SURROUNDING OF CO ATOMS IMPLANTED IN SI AND GE BELOW THE FULL AMORPHIZATION LIMIT

被引：15

作者：

LANGOUCHE, G ^{[1
]}

DEPOTTER, M ^{[1
]}

DEZSI, I ^{[1
]}

VANROSSUM, M ^{[1
]}

机构：

[1] CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY

来源：

RADIATION EFFECTS LETTERS | 1982年 / 67卷 / 04期

关键词：

Compendex;

D O I：

10.1080/01422448208226865

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Semiconductor materials

引用

页码：101 / 106

页数：6

共 21 条

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