EXTREMELY LOW-BACK FACET FEEDBACK BY QUANTUM-CONFINED STARK-EFFECT ABSORPTION IN AN EDGE-EMITTING LIGHT-EMITTING DIODE

被引：2

作者：

FOUQUET, JE ^{[1
]}

SORIN, WV ^{[1
]}

TROTT, GR ^{[1
]}

LUDOWISE, MJ ^{[1
]}

BRAUN, DM ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,DIV MICROWAVE TECHNOL,SANTA ROSA,CA 95403

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 05期

关键词：

D O I：

10.1109/68.215264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum-confined Stark effect is employed to form an integral reverse-biased absorber in a GaInAsP edge-emitting light emitting diode. Optical low coherence reflectometry is used to measure the magnitude of reflections through this absorber. Front facet-back facet roundtrip reflection magnitudes are below -110 dB in devices having an antireflection coating on the front facet only. All other round trip reflections are below -80 dB. This device provides a wide usable dynamic range in optical low coherence reflectometry measurements.

引用

页码：509 / 511

页数：3

共 6 条

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