PLANAR BURIED HETEROSTRUCTURE INP GAINAS LASERS GROWN ENTIRELY BY OMVPE

被引：28

作者：

MILLER, BI

KOREN, U

CAPIK, RJ

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 18期

关键词：

D O I：

10.1049/el:19860646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：947 / 949

页数：3

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[9] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER
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