SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER

被引：28

作者：

TANAKA, K

HOSHINO, M

WAKAO, K

KOMENO, J

ISHIKAWA, H

YAMAKOSHI, S

IMAI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1127 / 1129

页数：3

共 10 条

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[7] 1.5-MU-M GAINASP-INP BURIED HETEROSTRUCTURE LASERS FABRICATED BY HYBRID COMBINATION OF LIQUID-PHASE AND VAPOR-PHASE EPITAXY [J].

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[9] INGAASP/INP BURIED CRESCENT LASER DIODE EMITTING AT 1.3 MU-M WAVELENGTH [J].

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[10] GROOVE GAINASP LASER ON SEMI-INSULATING INP [J].

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