1.5-MU-M GAINASP-INP BURIED HETEROSTRUCTURE LASERS FABRICATED BY HYBRID COMBINATION OF LIQUID-PHASE AND VAPOR-PHASE EPITAXY

被引：7

作者：

MIKAMI, O

NAKAGOME, H

YAMAUCHI, Y

KANBE, H

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1049/el:19820161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：237 / 239

页数：3

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[7] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
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[8] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS
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[9] VAPOR-PHASE EPITAXIAL-GROWTH OF INP ON LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 518 - 524
[10] LPE GROWTH OF 1.5-1.6-MU-M IN1-XGAXAS1-YPY CRYSTALS BY A MODIFIED SOURCE-SEED METHOD
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