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VAPOR-PHASE EPITAXIAL-GROWTH OF INP ON LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS
被引:11
作者
:
SUSA, N
论文数:
0
引用数:
0
h-index:
0
SUSA, N
YAMAUCHI, Y
论文数:
0
引用数:
0
h-index:
0
YAMAUCHI, Y
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1981年
/ 51卷
/ 03期
关键词
:
D O I
:
10.1016/0022-0248(81)90432-2
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:518 / 524
页数:7
相关论文
共 26 条
[1]
OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS
AKITA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
AKITA, K
KUSUNOKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KUSUNOKI, T
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOMIYA, S
KOTANI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOTANI, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
46
(06)
: 783
-
787
[2]
TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE
ANDO, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
ANDO, H
KANBE, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
KANBE, H
ITO, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
ITO, M
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
KANEDA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
: L277
-
L280
[3]
ANDO H, UNPUBLISHED
[4]
ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
ARAI, S
ASADA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
ASADA, M
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
SUEMATSU, Y
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
ITAYA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(12)
: 2333
-
2334
[5]
CHERVRIER J, 1979, J CRYSTAL GROWTH, V47, P267
[6]
ZN-DOPED VAPOR-GROWN INP
CHEVRIER, J
论文数:
0
引用数:
0
h-index:
0
CHEVRIER, J
HUBER, A
论文数:
0
引用数:
0
h-index:
0
HUBER, A
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
: 815
-
817
[7]
MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM-PHOSPHIDE
CLARKE, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
CLARKE, RC
TAYLOR, LL
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
TAYLOR, LL
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 190
-
196
[8]
PURE AND DOPED INDIUM-PHOSPHIDE BY VAPOR-PHASE EPITAXY
CLARKE, RC
论文数:
0
引用数:
0
h-index:
0
CLARKE, RC
TAYLOR, LL
论文数:
0
引用数:
0
h-index:
0
TAYLOR, LL
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
43
(04)
: 473
-
479
[9]
PREPARATION AND PROPERTIES OF VAPOR-PHASE-EPITAXIAL-GROWN GAINASP
ENDA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
ENDA, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(11)
: 2167
-
2168
[10]
LIQUID-PHASE-EPITAXIAL GROWTH OF LATTICE-MATCHED IN0.53GA0.47AS ON (100)-ORIENTED INP
HYDER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
HYDER, SB
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ANTYPAS, GA
ESCHER, JS
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ESCHER, JS
GREGORY, PE
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
GREGORY, PE
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 551
-
553
←
1
2
3
→
共 26 条
[1]
OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS
AKITA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
AKITA, K
KUSUNOKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KUSUNOKI, T
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOMIYA, S
KOTANI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOTANI, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
46
(06)
: 783
-
787
[2]
TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE
ANDO, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
ANDO, H
KANBE, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
KANBE, H
ITO, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
ITO, M
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
KANEDA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
: L277
-
L280
[3]
ANDO H, UNPUBLISHED
[4]
ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
ARAI, S
ASADA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
ASADA, M
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
SUEMATSU, Y
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology
ITAYA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(12)
: 2333
-
2334
[5]
CHERVRIER J, 1979, J CRYSTAL GROWTH, V47, P267
[6]
ZN-DOPED VAPOR-GROWN INP
CHEVRIER, J
论文数:
0
引用数:
0
h-index:
0
CHEVRIER, J
HUBER, A
论文数:
0
引用数:
0
h-index:
0
HUBER, A
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
: 815
-
817
[7]
MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM-PHOSPHIDE
CLARKE, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
CLARKE, RC
TAYLOR, LL
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
TAYLOR, LL
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 190
-
196
[8]
PURE AND DOPED INDIUM-PHOSPHIDE BY VAPOR-PHASE EPITAXY
CLARKE, RC
论文数:
0
引用数:
0
h-index:
0
CLARKE, RC
TAYLOR, LL
论文数:
0
引用数:
0
h-index:
0
TAYLOR, LL
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
43
(04)
: 473
-
479
[9]
PREPARATION AND PROPERTIES OF VAPOR-PHASE-EPITAXIAL-GROWN GAINASP
ENDA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
ENDA, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(11)
: 2167
-
2168
[10]
LIQUID-PHASE-EPITAXIAL GROWTH OF LATTICE-MATCHED IN0.53GA0.47AS ON (100)-ORIENTED INP
HYDER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
HYDER, SB
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ANTYPAS, GA
ESCHER, JS
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ESCHER, JS
GREGORY, PE
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
GREGORY, PE
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 551
-
553
←
1
2
3
→