PREPARATION AND PROPERTIES OF VAPOR-PHASE-EPITAXIAL-GROWN GAINASP

被引：15

作者：

ENDA, H

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 11期

关键词：

D O I：

10.1143/JJAP.18.2167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：2167 / 2168

页数：2

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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 584 - 586
[2] GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS
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ANTYPAS, GA
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 932 - 937
[3] VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-YINYAS1-XPX QUATERNARY ALLOYS
SUGIYAMA, K
KOJIMA, H
ENDA, H
SHIBATA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) : 2197 - 2203