VAPOR-PHASE EPITAXIAL-GROWTH OF QUATERNARY IN1-XGAXASYP1-Y IN THE 0.75-1.35-EV BAND-GAP RANGE

被引：23

作者：

HYDER, SB

SAXENA, RR

HOOPER, CC

机构：

[1] Corporate Research Laboratory, Varian Associates Inc., Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of In1-xGaxAsyP1-y quaternaries on InP (100) substrates was obtained over the whole band-gap range 0.75-1.35 eV. Growth conditions and gas flow ratios are described for an open tube VPE of these quaternaries.

引用

页码：584 / 586

页数：3

共 15 条

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