INFLUENCE OF DEPOSITION TEMPERATURE ON COMPOSITION AND GROWTH-RATE OF GAASX P1-X LAYERS

被引：20

作者：

BAN, VS

TIETJEN, JJ

GOSSENBE.HF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.1661533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2471 / &

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