THIN-FILM EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS

被引：10

作者：

HYDER, SB ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303

来源：

关键词：

D O I：

10.1149/1.2132627

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1503 / 1508

页数：6

共 22 条

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[4] PREPARATION OF EPITAXIAL GAXIN1-XAS
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[5] DECKER DR, 1975, 5TH P BIENN CORN EL, V5, P305
[6] DZHAKHUTASHVILI TV, 1972, SOV PHYS SEMICOND, V5, P190
[7] ENSTROM RE, 1970, 3RD P INT S GALL ARS
[8] COMPOSITIONAL DEPENDENCE OF EFFECTIVE MASSES IN N-TYPE GAXIN1-X AS ALLOYS USING SUBMILLIMETER CYCLOTRON-RESONANCE
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[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (02) : 375 - +
[9] GIMELFAR.FA, 1970, FIZ TVERD TELA+, V11, P1612
[10] ELECTRON-MOBILITY IN INXGA1-XAS ALLOYS
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ENSTROM, RE
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[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1621 - 1626