GROOVE GAINASP LASER ON SEMI-INSULATING INP

被引：15

作者：

YU, KL

KOREN, U

CHEN, TR

CHEN, PC

YARIV, A

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 21期

关键词：

D O I：

10.1049/el:19810553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：790 / 792

页数：3

相关论文

共 7 条

[1] EMBEDDED EPITAXIAL-GROWTH OF LOW-THRESHOLD GAINASP-INP INJECTION-LASERS
CHEN, PC
YU, KL
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 301 - 303
[2] 1.5 MU-M REGION INP-GAINASP BURIED HETEROSTRUCTURE LASERS ON SEMI-INSULATING SUBSTRATES
MATSUOKA, T
TAKAHEI, K
NOGUCHI, Y
NAGAI, H
[J]. ELECTRONICS LETTERS, 1981, 17 (01) : 12 - 14
[3] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT
MUROTANI, T
OOMURA, E
HIGUCHI, H
NAMIZAKI, H
SUSAKI, W
[J]. ELECTRONICS LETTERS, 1980, 16 (14) : 566 - 568
[4] VAPOR-PHASE GROWTH OF (INDIUM,GA)(ARSENIC,P) QUATERNARY ALLOYS
OLSEN, GH
ZAMEROWSKI, TJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 128 - 138
[5] MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
URY, I
MARGALIT, S
YUST, M
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (07) : 430 - 431
[6] LOW THRESHOLD BERYLLIUM IMPLANTED (GAAL)AS LASER ON SEMI-INSULATING SUBSTRATE
WILT, D
BARCHAIM, N
MARGALIT, S
URY, I
YUST, M
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (04) : 390 - 391
[7] MONOLITHICALLY INTEGRATED OPTICAL REPEATER
YUST, M
BARCHAIM, N
IZADPANAH, SH
MARGALIT, S
URY, I
WILT, D
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 795 - 797