VAPOR-PHASE GROWTH OF (INDIUM,GA)(ARSENIC,P) QUATERNARY ALLOYS

被引：40

作者：

OLSEN, GH

ZAMEROWSKI, TJ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：128 / 138

页数：11

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[10] VAPOR-PHASE EPITAXIAL-GROWTH OF QUATERNARY IN1-XGAXASYP1-Y IN THE 0.75-1.35-EV BAND-GAP RANGE
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