TDEG IN IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY CHLORIDE VPE

被引：32

作者：

KOMENO, J

TAKIKAWA, M

OZEKI, M

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 13期

关键词：

D O I：

10.1049/el:19830321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：473 / 474

页数：2

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[1] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
GULDNER, Y
VIEREN, JP
VOISIN, P
VOOS, M
RAZEGHI, M
POISSON, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
[2] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE
KASTALSKY, A
DINGLE, R
CHENG, KY
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277
[3] TRANSFERRED-ELECTRON EFFECT IN IN0.53GA0.47AS
KOWALSKY, W
SCHLACHETZKI, A
[J]. ELECTRONICS LETTERS, 1983, 19 (06) : 189 - 190
[4] HIGH-MOBILITY GA0.47IN0.53AS THIN EPITAXIAL LAYERS GROWN BY MBE, VERY CLOSELY LATTICE-MATCHED TO INP
MASSIES, J
ROCHETTE, J
DELESCLUSE, P
ETIENNE, P
CHEVRIER, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 758 - 760
[5] VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD
MIZUTANI, T
YOSHIDA, M
USUI, A
WATANABE, H
YUASA, T
HAYASHI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L113 - L116
[6] ELECTRICAL CHARACTERIZATION AND ALLOY SCATTERING MEASUREMENTS OF LPE GAXIN1-XAS-INP FOR HIGH-FREQUENCY DEVICE APPLICATIONS
OLIVER, JD
EASTMAN, LF
KIRCHNER, PD
SCHAFF, WJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 64 - 68
[7] THE CARRIER MOBILITIES IN GA0.47IN0.53AS GROWN BY ORGANOMETALLIC CVD AND LIQUID-PHASE EPITAXY
PEARSALL, TP
HIRTZ, JP
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 127 - 131
[8] POSTGROWTH HEAT-TREATMENT EFFECTS IN HIGH-PURITY LIQUID-PHASE-EPITAXIAL IN0.53GA0.47AS
RAO, MV
BHATTACHARYA, PK
[J]. ELECTRONICS LETTERS, 1983, 19 (06) : 196 - 197