HIGH-MOBILITY GA0.47IN0.53AS THIN EPITAXIAL LAYERS GROWN BY MBE, VERY CLOSELY LATTICE-MATCHED TO INP

被引：16

作者：

MASSIES, J

ROCHETTE, J

DELESCLUSE, P

ETIENNE, P

CHEVRIER, J

LINH, NT

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 18期

关键词：

D O I：

10.1049/el:19820513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：758 / 760

页数：3

共 12 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609

[2] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6328-6330

[3] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

DRUMMOND, TJ ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149

[4] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

HECKINGBOTTOM, R ;

OHNO, H ;

WOOD, CEC ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292

[5] GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS [J].

DUCHEMIN, JP ;

HIRTZ, JP ;

RAZEGHI, M ;

BONNET, M ;

HERSEE, SD .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :64-73

[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J].

LAVIRON, M ;

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

CHAPLART, J ;

LINH, NT .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :530-532

[7] SILVER CONTACT ON GAAS (001) AND INP (001) [J].

MASSIES, J ;

DEVOLDERE, P ;

LINH, NT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1353-1357

[8] ON THE GROWTH OF SILVER ON GAAS(001) SURFACES [J].

MASSIES, J ;

LINH, NT .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) :25-38

[9]

MASSIES J, 1977, 3RD ANGL FRENCH M MB

[10] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

MILLER, BI ;

MCFEE, JH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) :1310-1317

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