TRANSFERRED-ELECTRON EFFECT IN IN0.53GA0.47AS

被引：10

作者：

KOWALSKY, W

SCHLACHETZKI, A

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1049/el:19830131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：189 / 190

页数：2

共 11 条

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[2] TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y [J].

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GREENE, PD .

ELECTRONICS LETTERS, 1981, 17 (20) :756-757

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LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244

[5] EFFECTS OF COMPOSITIONAL CLUSTERING ON ELECTRON-TRANSPORT IN IN0.53GA0.47AS [J].

MARSH, JH .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :732-734

[6]

MARSH JH, 1981, I PHYS C SER, V56, P621

[7] ANATOMY OF TRANSFERRED-ELECTRON EFFECT IN III-V SEMICONDUCTORS [J].

RIDLEY, BK .

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[8] SWITCHING IN MINIATURIZED PLANAR GUNN DEVICES [J].

SCHLACHETZKI, A .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 41 (01) :103-111

[9] TRANSFERRED-ELECTRON OSCILLATION IN NORMAL-IN0.53GA0.47AS [J].

TAKEDA, Y ;

SHIKAGAWA, N ;

SASAKI, A .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :1003-1005

[10]

WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

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