INGAASP/INP BURIED CRESCENT LASER DIODE EMITTING AT 1.3 MU-M WAVELENGTH

被引：27

作者：

OOMURA, E

HIGUCHI, H

SAKAKIBARA, Y

HIRANO, R

NAMIZAKI, H

SUSAKI, W

IKEDA, K

FUJIKAWA, K

机构：

[1] MITSUBISHI ELECT CORP,DEPT SEMICOND RES & DEV,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

[2] MITSUBISHI ELECT CORP,LSI RES & DEV LAB,OPTO ELECTR DEVICES GRP 1,ITAMI,HYOGO 664,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 08期

关键词：

D O I：

10.1109/JQE.1984.1072495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：866 / 874

页数：9

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