LOW-THRESHOLD HIGH-SPEED 1.55-MU-M VAPOR-PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS (VPTBH)

被引:22
作者
KOCH, TL [1 ]
COLDREN, LA [1 ]
BRIDGES, TJ [1 ]
BURKHARDT, EG [1 ]
CORVINI, PJ [1 ]
MILLER, BI [1 ]
WILT, DP [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1049/el:19840581
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:856 / 857
页数:2
相关论文
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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1679-1688
[2]  
COLDREN LA, 1984, 7TH TOP M INT GUID W
[3]   A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J].
LIAU, ZL ;
WALPOLE, JN .
APPLIED PHYSICS LETTERS, 1982, 40 (07) :568-570
[4]  
OLSEN GH, 1982, GAINASP ALLOY SEMICO, P18