SURFACE RECONSTRUCTIONS OF ZINCBLENDE GAN/GAAS(001) IN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引：161

作者：

BRANDT, O ^{[1
]}

YANG, H ^{[1
]}

JENICHEN, B ^{[1
]}

SUZUKI, Y ^{[1
]}

DAWERITZ, L ^{[1
]}

PLOOG, KH ^{[1
]}

机构：

[1] KYUSHU INST TECHNOL, TOBATA KU, KITAKYUSHU 804, FUKUOKA, JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.52.R2253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We identify the growth conditions required for the synthesis of purely cubic GaN films on GaAs(001) by means of plasma-assisted molecular-beam epitaxy. It is shown that it is the surface stoichiometry which governs the phase composition and which thus has to be tightly controlled in order to avoid nucleation of hexagonal grains. Such control over the surface stoichiometry is achieved by investigating the surface reconstructions of zinc-blende GaN under both static and dynamic conditions by in situ reflection high-energy electron diffraction.

引用

页码：R2253 / R2256

页数：4

共 14 条

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