EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZINCBLENDE GALLIUM NITRIDE ON (001) SILICON

被引:354
作者
LEI, T
MOUSTAKAS, TD
GRAHAM, RJ
HE, Y
BERKOWITZ, SJ
机构
[1] BOSTON UNIV,DEPT PHYS,BOSTON,MA 02215
[2] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287
关键词
D O I
10.1063/1.350642
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma-assisted molecular-beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is grown at higher temperatures. This method of film growth was shown to lead to good single-crystalline beta-GaN and to promote lateral growth resulting in smooth surface morphology. The full width at half-maximum of the x-ray rocking curve in the best case was found to be 60 min. Optical-absorption measurements indicate that the band gap of beta-GaN is 3.2 eV and the index of the refraction below the absorption edge is 2.5. Conductivity measurements indicate that the films may have a carrier concentration below 10(17) cm-3.
引用
收藏
页码:4933 / 4943
页数:11
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